Daily Papers

Point defects play a central role in driving the properties of materials. First-principles methods are widely used to compute defect energetics and structures, including at scale for high-throughput defect databases. However, these methods are computationally expensive, making machine-learning force fields (MLFFs) an attractive alternative for accelerating structural relaxations. Most existing MLFFs are based on graph neural networks (GNNs), which can suffer from oversmoothing and poor representation of long-range interactions. Both of these issues are especially of concern when modeling point defects. To address these challenges, we introduce the Accelerated Deep Atomic Potential Transformer (ADAPT), an MLFF that replaces graph representations with a direct coordinates-in-space formulation and explicitly considers all pairwise atomic interactions. Atoms are treated as tokens, with a Transformer encoder modeling their interactions. Applied to a dataset of silicon point defects, ADAPT achieves a roughly 33 percent reduction in both force and energy prediction errors relative to a state-of-the-art GNN-based model, while requiring only a fraction of the computational cost.

Silicon nitride has emerged as a promising photonic platform for integrated single-photon sources, yet the microscopic origin of the recently observed bright quantum emissions remains unclear. Using hybrid density functional theory, we show that the negatively charged N_SiV_N center (NV^{-}) in the C_{1h} configuration exhibits a linearly polarized zero-phonon line (ZPL) at 2.46 eV, with a radiative lifetime of 9.01 ns and a high Debye-Waller (DW) factor of 33%. We further find that the C_{1h} configuration is prone to a pseudo-Jahn-Teller distortion, yielding two symmetrically equivalent defect structures that emit bright, linearly polarized ZPL at 1.80 eV with a lifetime of 10.17 ns and an increased DW factor of 41%. These nitrogen-vacancy-related defects explain the origins of visible quantum emissions, paving the way for deterministic and monolithically integrated silicon-nitride quantum photonics.

In this study, we applied the PointRend (Point-based Rendering) method to semiconductor defect segmentation. PointRend is an iterative segmentation algorithm inspired by image rendering in computer graphics, a new image segmentation method that can generate high-resolution segmentation masks. It can also be flexibly integrated into common instance segmentation meta-architecture such as Mask-RCNN and semantic meta-architecture such as FCN. We implemented a model, termed as SEMI-PointRend, to generate precise segmentation masks by applying the PointRend neural network module. In this paper, we focus on comparing the defect segmentation predictions of SEMI-PointRend and Mask-RCNN for various defect types (line-collapse, single bridge, thin bridge, multi bridge non-horizontal). We show that SEMI-PointRend can outperforms Mask R-CNN by up to 18.8% in terms of segmentation mean average precision.

The presence of point defects such as vacancies plays an important role in material design. Here, we demonstrate that a graph neural network (GNN) model trained only on perfect materials can also be used to predict vacancy formation energies (E_{vac}) of defect structures without the need for additional training data. Such GNN-based predictions are considerably faster than density functional theory (DFT) calculations with reasonable accuracy and show the potential that GNNs are able to capture a functional form for energy predictions. To test this strategy, we developed a DFT dataset of 508 E_{vac} consisting of 3D elemental solids, alloys, oxides, nitrides, and 2D monolayer materials. We analyzed and discussed the applicability of such direct and fast predictions. We applied the model to predict 192494 E_{vac} for 55723 materials in the JARVIS-DFT database.

Precision in identifying nanometer-scale device-killer defects is crucial in both semiconductor research and development as well as in production processes. The effectiveness of existing ML-based approaches in this context is largely limited by the scarcity of data, as the production of real semiconductor wafer data for training these models involves high financial and time costs. Moreover, the existing simulation methods fall short of replicating images with identical noise characteristics, surface roughness and stochastic variations at advanced nodes. We propose a method for generating synthetic semiconductor SEM images using a diffusion model within a limited data regime. In contrast to images generated through conventional simulation methods, SEM images generated through our proposed DL method closely resemble real SEM images, replicating their noise characteristics and surface roughness adaptively. Our main contributions, which are validated on three different real semiconductor datasets, are: i) proposing a patch-based generative framework utilizing DDPM to create SEM images with intended defect classes, addressing challenges related to class-imbalance and data insufficiency, ii) demonstrating generated synthetic images closely resemble real SEM images acquired from the tool, preserving all imaging conditions and metrology characteristics without any metadata supervision, iii) demonstrating a defect detector trained on generated defect dataset, either independently or combined with a limited real dataset, can achieve similar or improved performance on real wafer SEM images during validation/testing compared to exclusive training on a real defect dataset, iv) demonstrating the ability of the proposed approach to transfer defect types, critical dimensions, and imaging conditions from one specified CD/Pitch and metrology specifications to another, thereby highlighting its versatility.

Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of utmost necessity to streamline further developments. We demonstrate that electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) can be used to quickly map SEI components and quantify LixSi alloys from single experiments, with resolutions down to 5 nm. Exploiting the low-loss part of the EEL spectrum allowed us to circumvent the degradation phenomena that have so far crippled the application of this technique on such beam-sensitive compounds. Our results provide unprecedented insight into silicon aging mechanisms in full cell configuration. We observe the morphology of the SEI to be extremely heterogeneous at the particle scale but with clear chemical evolutions with extended cycling coming from both SEI accumulation and a transition from lithium-rich carbonate-like compounds to lithium-poor ones. Thanks to the retrieval of several results from a single dataset, we were able to correlate local discrepancies in lithiation to the initial crystallinity of silicon as well as to the local SEI chemistry and morphology. This study emphasizes how initial heterogeneities in the percolating electronic network and the porosity affect SiNPs aggregates along cycling. These findings pinpoint the crucial role of an optimized formulation in silicon-based thick electrodes.

Shrinking pattern dimensions leads to an increased variety of defect types in semiconductor devices. This has spurred innovation in patterning approaches such as Directed self-assembly (DSA) for which no traditional, automatic defect inspection software exists. Machine Learning-based SEM image analysis has become an increasingly popular research topic for defect inspection with supervised ML models often showing the best performance. However, little research has been done on obtaining a dataset with high-quality labels for these supervised models. In this work, we propose a method for obtaining coherent and complete labels for a dataset of hexagonal contact hole DSA patterns while requiring minimal quality control effort from a DSA expert. We show that YOLOv8, a state-of-the-art neural network, achieves defect detection precisions of more than 0.9 mAP on our final dataset which best reflects DSA expert defect labeling expectations. We discuss the strengths and limitations of our proposed labeling approach and suggest directions for future work in data-centric ML-based defect inspection.

As the globalization of semiconductor design and manufacturing processes continues, the demand for defect detection during integrated circuit fabrication stages is becoming increasingly critical, playing a significant role in enhancing the yield of semiconductor products. Traditional wafer map defect pattern detection methods involve manual inspection using electron microscopes to collect sample images, which are then assessed by experts for defects. This approach is labor-intensive and inefficient. Consequently, there is a pressing need to develop a model capable of automatically detecting defects as an alternative to manual operations. In this paper, we propose a method that initially employs a pre-trained VAE model to obtain the fault distribution information of the wafer map. This information serves as guidance, combined with the original image set for semi-supervised model training. During the semi-supervised training, we utilize a teacher-student network for iterative learning. The model presented in this paper is validated on the benchmark dataset WM-811K wafer dataset. The experimental results demonstrate superior classification accuracy and detection performance compared to state-of-the-art models, fulfilling the requirements for industrial applications. Compared to the original architecture, we have achieved significant performance improvement.

The chips contained in any electronic device are manufactured over circular silicon wafers, which are monitored by inspection machines at different production stages. Inspection machines detect and locate any defect within the wafer and return a Wafer Defect Map (WDM), i.e., a list of the coordinates where defects lie, which can be considered a huge, sparse, and binary image. In normal conditions, wafers exhibit a small number of randomly distributed defects, while defects grouped in specific patterns might indicate known or novel categories of failures in the production line. Needless to say, a primary concern of semiconductor industries is to identify these patterns and intervene as soon as possible to restore normal production conditions. Here we address WDM monitoring as an open-set recognition problem to accurately classify WDM in known categories and promptly detect novel patterns. In particular, we propose a comprehensive pipeline for wafer monitoring based on a Submanifold Sparse Convolutional Network, a deep architecture designed to process sparse data at an arbitrary resolution, which is trained on the known classes. To detect novelties, we define an outlier detector based on a Gaussian Mixture Model fitted on the latent representation of the classifier. Our experiments on a real dataset of WDMs show that directly processing full-resolution WDMs by Submanifold Sparse Convolutions yields superior classification performance on known classes than traditional Convolutional Neural Networks, which require a preliminary binning to reduce the size of the binary images representing WDMs. Moreover, our solution outperforms state-of-the-art open-set recognition solutions in detecting novelties.

Manufacturing wafers is an intricate task involving thousands of steps. Defect Pattern Recognition (DPR) of wafer maps is crucial for determining the root cause of production defects, which may further provide insight for yield improvement in wafer foundry. During manufacturing, various defects may appear standalone in the wafer or may appear as different combinations. Identifying multiple defects in a wafer is generally harder compared to identifying a single defect. Recently, deep learning methods have gained significant traction in mixed-type DPR. However, the complexity of defects requires complex and large models making them very difficult to operate on low-memory embedded devices typically used in fabrication labs. Another common issue is the unavailability of labeled data to train complex networks. In this work, we propose an unsupervised training routine to distill the knowledge of complex pre-trained models to lightweight deployment-ready models. We empirically show that this type of training compresses the model without sacrificing accuracy despite being up to 10 times smaller than the teacher model. The compressed model also manages to outperform contemporary state-of-the-art models.

This survey paper offers a comprehensive review of methodologies utilizing machine learning (ML) classification techniques for identifying wafer defects in semiconductor manufacturing. Despite the growing body of research demonstrating the effectiveness of ML in wafer defect identification, there is a noticeable absence of comprehensive reviews on this subject. This survey attempts to fill this void by amalgamating available literature and providing an in-depth analysis of the advantages, limitations, and potential applications of various ML classification algorithms in the realm of wafer defect detection. An innovative taxonomy of methodologies that we present provides a detailed classification of algorithms into more refined categories and techniques. This taxonomy follows a three-tier structure, starting from broad methodology categories and ending with specific techniques. It aids researchers in comprehending the complex relationships between different algorithms and their techniques. We employ a rigorous empirical and experimental evaluation to rank these varying techniques. For the empirical evaluation, we assess techniques based on a set of five criteria. The experimental evaluation ranks the algorithms employing the same techniques, sub-categories, and categories. Also the paper illuminates the future prospects of ML classification techniques for wafer defect identification, underscoring potential advancements and opportunities for further research in this field

In the field of integrated circuit manufacturing, the detection and classification of nanoscale wafer defects are critical for subsequent root cause analysis and yield enhancement. The complex background patterns observed in scanning electron microscope (SEM) images and the diverse textures of the defects pose significant challenges. Traditional methods usually suffer from insufficient data, labels, and poor transferability. In this paper, we propose a novel few-shot learning approach, SEM-CLIP, for accurate defect classification and segmentation. SEM-CLIP customizes the Contrastive Language-Image Pretraining (CLIP) model to better focus on defect areas and minimize background distractions, thereby enhancing segmentation accuracy. We employ text prompts enriched with domain knowledge as prior information to assist in precise analysis. Additionally, our approach incorporates feature engineering with textual guidance to categorize defects more effectively. SEM-CLIP requires little annotated data, substantially reducing labor demands in the semiconductor industry. Extensive experimental validation demonstrates that our model achieves impressive classification and segmentation results under few-shot learning scenarios.

Using {\em ab initio} density functional theory calculations, we characterize changes in the electronic structure of MoS_{2} monolayers introduced by missing or additional adsorbed sulfur atoms. We furthermore identify the chemical and electronic function of substances that have been reported to reduce the adverse effect of sulfur vacancies in quenching photoluminescence and reducing electronic conductance. We find that thiol-group containing molecules adsorbed at vacancy sites may re-insert missing sulfur atoms. In presence of additional adsorbed sulfur atoms, thiols may form disulfides on the MoS_{2} surface to mitigate the adverse effect of defects.

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

Recent advancements in quality control across various industries have increasingly utilized the integration of video cameras and image processing for effective defect detection. A critical barrier to progress is the scarcity of comprehensive datasets featuring annotated defects, which are essential for developing and refining automated defect detection models. This systematic review, spanning from 2015 to 2023, identifies 15 publicly available datasets and critically examines them to assess their effectiveness and applicability for benchmarking and model development. Our findings reveal a diverse landscape of datasets, such as NEU-CLS, NEU-DET, DAGM, KolektorSDD, PCB Defect Dataset, and the Hollow Cylindrical Defect Detection Dataset, each with unique strengths and limitations in terms of image quality, defect type representation, and real-world applicability. The goal of this systematic review is to consolidate these datasets in a single location, providing researchers who seek such publicly available resources with a comprehensive reference.

Manufacturing wafers is an intricate task involving thousands of steps. Defect Pattern Recognition (DPR) of wafer maps is crucial to find the root cause of the issue and further improving the yield in the wafer foundry. Mixed-type DPR is much more complicated compared to single-type DPR due to varied spatial features, the uncertainty of defects, and the number of defects present. To accurately predict the number of defects as well as the types of defects, we propose a novel compact deformable convolutional transformer (DC Transformer). Specifically, DC Transformer focuses on the global features present in the wafer map by virtue of learnable deformable kernels and multi-head attention to the global features. The proposed method succinctly models the internal relationship between the wafer maps and the defects. DC Transformer is evaluated on a real dataset containing 38 defect patterns. Experimental results show that DC Transformer performs exceptionally well in recognizing both single and mixed-type defects. The proposed method outperforms the current state of the models by a considerable margin

Reliable anomaly detection in photovoltaic (PV) modules is critical for maintaining solar energy efficiency. However, developing robust computer vision models for PV inspection is constrained by the scarcity of large-scale, diverse, and balanced datasets. This study introduces PV-DDPM, a spatially conditioned denoising diffusion probabilistic model that generates anomalous electroluminescence (EL) images across four PV cell types: multi-crystalline silicon (multi-c-Si), mono-crystalline silicon (mono-c-Si), half-cut multi-c-Si, and interdigitated back contact (IBC) with dogbone interconnect. PV-DDPM enables controlled synthesis of single-defect and multi-defect scenarios by conditioning on binary masks representing structural features and defect positions. To the best of our knowledge, this is the first framework that jointly models multiple PV cell types while supporting simultaneous generation of diverse anomaly types. We also introduce E-SCDD, an enhanced version of the SCDD dataset, comprising 1,000 pixel-wise annotated EL images spanning 30 semantic classes, and 1,768 unlabeled synthetic samples. Quantitative evaluation shows our generated images achieve a Fréchet Inception Distance (FID) of 4.10 and Kernel Inception Distance (KID) of 0.0023 pm 0.0007 across all categories. Training the vision--language anomaly detection model AA-CLIP on E-SCDD, compared to the SCDD dataset, improves pixel-level AUC and average precision by 1.70 and 8.34 points, respectively.

Too many defective compute chips are escaping existing manufacturing tests -- at least an order of magnitude more than industrial targets across all compute chip types in data centers. Silent data corruptions (SDCs) caused by test escapes, when left unaddressed, pose a major threat to reliable computing. We present a three-pronged approach outlining future directions for overcoming test escapes: (a) Quick diagnosis of defective chips directly from system-level incorrect behaviors. Such diagnosis is critical for gaining insights into why so many defective chips escape existing manufacturing testing. (b) In-field detection of defective chips. (c) New test experiments to understand the effectiveness of new techniques for detecting defective chips. These experiments must overcome the drawbacks and pitfalls of previous industrial test experiments and case studies.

Nanostructured Si is the most promising high-capacity anode material to substantially increase the energy density of Li-ion batteries. Among the remaining challenges is its low rate capability as compared to conventional materials. To understand better what controls the diffusion of Li in the amorphous Li-Si alloy, we use a novel machine-learning potential trained on more than 40,000 ab-initio calculations and nanosecond-scale molecular dynamics simulations, to visualize for the first time the delithiation of entire LiSi nanoparticles. Our results show that the Si host is not static but undergoes a dynamic rearrangement from isolated atoms, to chains, and clusters, with the Li diffusion strongly governed by this Si rearrangement. We find that the Li diffusivity is highest when Si segregates into clusters, so that Li diffusion proceeds via hopping between the Si clusters. The average size of Si clusters and the concentration range over which Si clustering occurs can thus function as design criteria for the development of rate-improved anodes based on modified Si.

Internal defect detection constitutes a critical process in ensuring component quality, for which anomaly detection serves as an effective solution. However, existing anomaly detection datasets predominantly focus on surface defects in visible-light images, lacking publicly available X-ray datasets targeting internal defects in components. To address this gap, we construct the first publicly accessible component X-ray anomaly detection (CXR-AD) dataset, comprising real-world X-ray images. The dataset covers five industrial component categories, including 653 normal samples and 561 defect samples with precise pixel-level mask annotations. We systematically analyze the dataset characteristics and identify three major technical challenges: (1) strong coupling between complex internal structures and defect regions, (2) inherent low contrast and high noise interference in X-ray imaging, and (3) significant variations in defect scales and morphologies. To evaluate dataset complexity, we benchmark three state-of-the-art anomaly detection frameworks (feature-based, reconstruction-based, and zero-shot learning methods). Experimental results demonstrate a 29.78% average performance degradation on CXR-AD compared to MVTec AD, highlighting the limitations of current algorithms in handling internal defect detection tasks. To the best of our knowledge, CXR-AD represents the first publicly available X-ray dataset for component anomaly detection, providing a real-world industrial benchmark to advance algorithm development and enhance precision in internal defect inspection technologies.

Energy Dispersive X-ray (EDX) tomography in Scanning Transmission Electron Microscopy (STEM) enables 3D compositional and elemental mapping at the nanoscale, but its use is limited by restricted tilt ranges and low-dose conditions required to avoid beam damage. Limited-angle acquisition introduces missing-wedge artefacts such as elongation and anisotropic resolution, while noisy low-dose data further degrade reconstruction quality and quantitative reliability. Here, we introduce an unsupervised deep learning framework based on Deep Image Prior with total variation regularization (DIP-TV) for limited-angle STEM-EDX tomography. We extend it to a multi-channel formulation (DIPm-TV) that jointly reconstructs multiple elemental maps by exploiting spatial correlations. Using a synthetic 3-channel phantom, we show that the method compensates for severe missing-wedge artefacts corresponding to approximately 100^circ of missing angular range under moderate noise, outperforming simultaneous iterative reconstruction technique and compressed sensing approaches. We apply the method to 3D chemical analysis of Ge-Sb-Te (GST) memory devices in virgin (as-fabricated) and SET (crystalline) operational states. Samples were prepared as cross-sectional focused ion beam lamellae and acquired under a limited-angle tilt range from -40^circ to +40^circ with 5^circ steps and a dose of 2.0times10^5 e^-/Ang^2. The multi-channel approach enables voxel-by-voxel elemental reconstruction using only EDX signals without external structural priors such as high-angle annular dark-field imaging. The reconstructed volumes show near-isotropic spatial resolution and reveal compositional heterogeneities associated with device operation. This approach enables 3D chemical characterization in experimentally accessible sample geometries where conventional methods fail due to severe angular limitations.

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine-learning-assisted design and integrated experiment-theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.

Identifying defect patterns in a wafer map during manufacturing is crucial to find the root cause of the underlying issue and provides valuable insights on improving yield in the foundry. Currently used methods use deep neural networks to identify the defects. These methods are generally very huge and have significant inference time. They also require GPU support to efficiently operate. All these issues make these models not fit for on-line prediction in the manufacturing foundry. In this paper, we propose an extremely simple yet effective technique to extract features from wafer images. The proposed method is extremely fast, intuitive, and non-parametric while being explainable. The experiment results show that the proposed pipeline outperforms conventional deep learning models. Our feature extraction requires no training or fine-tuning while preserving the relative shape and location of data points as revealed by our interpretability analysis.

The usage of electronic devices increases, and becomes predominant in most aspects of life. Surface Mount Technology (SMT) is the most common industrial method for manufacturing electric devices in which electrical components are mounted directly onto the surface of a Printed Circuit Board (PCB). Although the expansion of electronic devices affects our lives in a productive way, failures or defects in the manufacturing procedure of those devices might also be counterproductive and even harmful in some cases. It is therefore desired and sometimes crucial to ensure zero-defect quality in electronic devices and their production. While traditional Image Processing (IP) techniques are not sufficient to produce a complete solution, other promising methods like Deep Learning (DL) might also be challenging for PCB inspection, mainly because such methods require big adequate datasets which are missing, not available or not updated in the rapidly growing field of PCBs. Thus, PCB inspection is conventionally performed manually by human experts. Unsupervised Learning (UL) methods may potentially be suitable for PCB inspection, having learning capabilities on the one hand, while not relying on large datasets on the other. In this paper, we introduce ChangeChip, an automated and integrated change detection system for defect detection in PCBs, from soldering defects to missing or misaligned electronic elements, based on Computer Vision (CV) and UL. We achieve good quality defect detection by applying an unsupervised change detection between images of a golden PCB (reference) and the inspected PCB under various setting. In this work, we also present CD-PCB, a synthesized labeled dataset of 20 pairs of PCB images for evaluation of defect detection algorithms.

Two critical limitations of organic-inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high-throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell applications. This study focuses on finding materials that are comprised of nontoxic elements, stable in a humid operating environment, and have an optimal bandgap for one of single junction, tandem Si-perovskite, or quantum dot-based solar cells. Single junction materials are also screened on predicted single junction photovoltaic (PV) efficiencies exceeding 22.7%, which is the current highest reported PV efficiency for halide perovskites. Generally, these methods qualitatively reproduce the properties of known promising nontoxic halide perovskites that have either been experimentally evaluated or predicted from theory. From a set of 1845 materials, 15 materials pass all screening criteria for single junction cell applications, 13 of which have not been previously investigated, such as (CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3, ((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3. These materials, together with others predicted in this study, may be promising candidate materials for stable, highly efficient, and non-toxic perovskite-based solar cells.

Facing with grave climate change and enormous energy demand, catalyzer gets more and more important due to its significant effect on reducing fossil fuels consumption. Hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) by water splitting are feasible ways to produce clean sustainable energy. Here we systematically explored atomic structures and related STM images of Se defects in PtSe2. The equilibrium fractions of vacancies under variable conditions were detailly predicted. Besides, we found the vacancies are highly kinetic stable, without recovering or aggregation. The Se vacancies in PtSe2 can dramatically enhance the HER performance, comparing with, even better than Pt(111). Beyond, we firstly revealed that PtSe2 monolayer with Se vacancies is also a good OER catalyst. The excellent bipolar catalysis of Se vacancies were further confirmed by experimental measurements. We produced defective PtSe2 by direct selenization of Pt foil at 773 K using a CVD process. Then we observed the HER and OER performance of defective PtSe2 is much highly efficient than Pt foils by a series of measurements. Our work with compelling theoretical and experimental studies indicates PtSe2 with Se defects is an ideal bipolar candidate for HER and OER.

Developing effective visual inspection models remains challenging due to the scarcity of defect data. While image generation models have been used to synthesize defect images, producing highly realistic defects remains difficult. We propose DefectFill, a novel method for realistic defect generation that requires only a few reference defect images. It leverages a fine-tuned inpainting diffusion model, optimized with our custom loss functions incorporating defect, object, and attention terms. It enables precise capture of detailed, localized defect features and their seamless integration into defect-free objects. Additionally, our Low-Fidelity Selection method further enhances the defect sample quality. Experiments show that DefectFill generates high-quality defect images, enabling visual inspection models to achieve state-of-the-art performance on the MVTec AD dataset.

The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) effects often cause permanent damages on such nanoscale electronic devices, and current state-of-the-art technologies to tackle TID make use of expensive radiation-hardened devices. This paper focuses on a novel and different approach: using machine learning algorithms on consumer electronic level Field Programmable Gate Arrays (FPGAs) to tackle TID effects and monitor them to replace before they stop working. This condition has a research challenge to anticipate when the board results in a total failure due to TID effects. We observed internal measurements of the FPGA boards under gamma radiation and used three different anomaly detection machine learning (ML) algorithms to detect anomalies in the sensor measurements in a gamma-radiated environment. The statistical results show a highly significant relationship between the gamma radiation exposure levels and the board measurements. Moreover, our anomaly detection results have shown that a One-Class Support Vector Machine with Radial Basis Function Kernel has an average Recall score of 0.95. Also, all anomalies can be detected before the boards stop working.

Precise optical inspection in industrial applications is crucial for minimizing scrap rates and reducing the associated costs. Besides merely detecting if a product is anomalous or not, it is crucial to know the distinct type of defect, such as a bent, cut, or scratch. The ability to recognize the "exact" defect type enables automated treatments of the anomalies in modern production lines. Current methods are limited to solely detecting whether a product is defective or not without providing any insights on the defect type, nevertheless detecting and identifying multiple defects. We propose MultiADS, a zero-shot learning approach, able to perform Multi-type Anomaly Detection and Segmentation. The architecture of MultiADS comprises CLIP and extra linear layers to align the visual- and textual representation in a joint feature space. To the best of our knowledge, our proposal, is the first approach to perform a multi-type anomaly segmentation task in zero-shot learning. Contrary to the other baselines, our approach i) generates specific anomaly masks for each distinct defect type, ii) learns to distinguish defect types, and iii) simultaneously identifies multiple defect types present in an anomalous product. Additionally, our approach outperforms zero/few-shot learning SoTA methods on image-level and pixel-level anomaly detection and segmentation tasks on five commonly used datasets: MVTec-AD, Visa, MPDD, MAD and Real-IAD.

Surface defects are a primary source of yield loss in manufacturing, yet existing anomaly detection methods often fail in real-world deployment due to limited and unrepresentative datasets. To overcome this, we introduce 3D-ADAM, a 3D Anomaly Detection in Additive Manufacturing dataset, that is the first large-scale, industry-relevant dataset for RGB+3D surface defect detection in additive manufacturing. 3D-ADAM comprises 14,120 high-resolution scans of 217 unique parts, captured with four industrial depth sensors, and includes 27,346 annotated defects across 12 categories along with 27,346 annotations of machine element features in 16 classes. 3D-ADAM is captured in a real industrial environment and as such reflects real production conditions, including variations in part placement, sensor positioning, lighting, and partial occlusion. Benchmarking state-of-the-art models demonstrates that 3D-ADAM presents substantial challenges beyond existing datasets. Validation through expert labelling surveys with industry partners further confirms its industrial relevance. By providing this benchmark, 3D-ADAM establishes a foundation for advancing robust 3D anomaly detection capable of meeting manufacturing demands.

Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.

Earlier, in the CINT program at Los Alamos National Laboratory, we focused ultrafast mode-locked lasers on the tip-sample junction of a scanning tunneling microscope to generate currents at hundreds of harmonics of the laser pulse repetition frequency. Each harmonic has a signal-to-noise ratio of 20 dB with a 10-dB linewidth of only 3 Hz. Now we model closed quantum nanocircuits with rectangular, triangular, or delta-function barrier, shunted by a beryllium filament for quasi-coherent electron transport over mean-free paths as great as 68 nm. The time-independent Schrödinger equation is solved with the boundary conditions that the wavefunction and its derivative are continuous at both connections. These four boundary conditions are used to form a four-by-four complex matrix equation with only zeros in the right-hand column vector which is required to have a non-trivial solution with each of the closed nanocircuits. Each model has four parameters: (1) the barrier length, (2) the height and shape of the barrier, (3) the length of the pre-barrier, and (4) the electron energy. Any three of these may be specified and then the fourth is varied to bring the determinant to zero to find the solutions on lines or surfaces in the space defined by the four parameters. First, we use a simplistic model having a rectangular barrier. The second model has a triangular barrier as a first approximation to field emission, and we are considering applying this approach for a self-contained nanoscale extension of our earlier effort to generate the harmonics at Los Alamos. The third model has a delta-function barrier, and the fourth model is an extension of the first one where the width of the rectangular barrier is varied inversely with its height.

Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In situ dopant insertion into a graphene lattice has thus far been demonstrated only for Si, which is ubiquitously present as a contaminant in this material. Here, we achieve in situ manipulation of Pt atoms and their insertion into the graphene host matrix using the e-beam deposited Pt on graphene as a host system. We further demonstrate a mechanism for stabilization of the Pt atom, enabled through the formation of Si-stabilized Pt heteroatomic clusters attached to the graphene surface. This study provides evidence toward the universality of the e-beam assembly approach, opening a pathway for exploring cluster chemistry through direct assembly.

The surface code family is a promising approach to implementing fault-tolerant quantum computations. Universal fault-tolerance requires error-corrected non-Clifford operations, in addition to Clifford gates, and for the former, it is imperative to experimentally demonstrate additional resources known as magic states. Another challenge is to efficiently embed surface codes into quantum hardware with connectivity constraints. This work simultaneously addresses both challenges by employing a qubit-efficient rotated heavy-hexagonal surface code for IBM quantum processors (ibm\_fez) and implementing the magic state injection protocol. Our work reports error thresholds for both logical bit- and phase-flip errors, of approx0.37% and approx0.31%, respectively, which are higher than the threshold values previously reported with traditional embedding. The post-selection-based preparation of logical magic states |H_Lrangle and |T_Lrangle achieve fidelities of 0.8806pm0.0002 and 0.8665pm0.0003, respectively, which are both above the magic state distillation threshold. Additionally, we report the minimum fidelity among injected arbitrary single logical qubit states as 0.8356pm0.0003. Our work demonstrates the potential for realising non-Clifford logical gates by producing high-fidelity logical magic states on IBM quantum devices.

Previous works for PCB defect detection based on image difference and image processing techniques have already achieved promising performance. However, they sometimes fall short because of the unaccounted defect patterns or over-sensitivity about some hyper-parameters. In this work, we design a deep model that accurately detects PCB defects from an input pair of a detect-free template and a defective tested image. A novel group pyramid pooling module is proposed to efficiently extract features of a large range of resolutions, which are merged by group to predict PCB defect of corresponding scales. To train the deep model, a dataset is established, namely DeepPCB, which contains 1,500 image pairs with annotations including positions of 6 common types of PCB defects. Experiment results validate the effectiveness and efficiency of the proposed model by achieving 98.6% mAP @ 62 FPS on DeepPCB dataset. This dataset is now available at: https://github.com/tangsanli5201/DeepPCB.

We present WaferSAGE, a framework for wafer defect visual question answering using small vision-language models. To address data scarcity in semiconductor manufacturing, we propose a three-stage synthesis pipeline incorporating structured rubric generation for precise evaluation. Starting from limited labeled wafer maps, we employ clustering-based cleaning to filter label noise, then generate comprehensive defect descriptions using vision-language models, which are converted into structured evaluation rubrics criteria. These rubrics guide the synthesis of VQA pairs, ensuring coverage across defect type identification, spatial distribution, morphology, and root cause analysis. Our dual assessment framework aligns rule-based metrics with LLM-Judge scores via Bayesian optimization, enabling reliable automated evaluation. Through curriculum-based reinforcement learning with Group Sequence Policy Optimization (GSPO) and rubric-aligned rewards, our 4B-parameter Qwen3-VL model achieves a 6.493 LLM-Judge score, closely approaching Gemini-3-Flash (7.149) while enabling complete on-premise deployment. We demonstrate that small models with domain-specific training can surpass proprietary large models in specialized industrial visual understanding, offering a viable path for privacy-preserving, cost-effective deployment in semiconductor manufacturing.

Detecting and localizing defects in 3D point clouds is challenging because abnormal samples are scarce and diverse, while training is often limited to normal data. We propose Anomaly Factory 3D (AF3AD), a modular framework that synthesizes diverse pseudo-anomalies from normal point clouds to expand the training data for unsupervised 3D anomaly detection methods that rely on pseudo-anomalies. AF3AD uses a center-conditioned parametric deformation model defined in local PCA frames, with kernel-controlled spatial falloff, anisotropy, directional gating, and normal/tangential displacement fields, enabling a broad set of geometric defect presets. We demonstrate its ease-of-use and effectiveness by integrating AF3AD with an offset-prediction detector and a reconstruction-based anomaly detection method, showing that AF3AD transfers across detection paradigms. Experiments on AnomalyShapeNet and Real3D-AD show consistent improvements in object- and point-level detection and localization, supported by ablations on preset groups and robustness under noise. AF3AD is designed as a standalone synthesis tool to facilitate adoption across different 3D anomaly detection paradigms. Code is available at github.com/vpc-ccg/AF3AD.

Defect inspection is paramount within the closed-loop manufacturing system. However, existing datasets for defect inspection often lack precision and semantic granularity required for practical applications. In this paper, we introduce the Defect Spectrum, a comprehensive benchmark that offers precise, semantic-abundant, and large-scale annotations for a wide range of industrial defects. Building on four key industrial benchmarks, our dataset refines existing annotations and introduces rich semantic details, distinguishing multiple defect types within a single image. Furthermore, we introduce Defect-Gen, a two-stage diffusion-based generator designed to create high-quality and diverse defective images, even when working with limited datasets. The synthetic images generated by Defect-Gen significantly enhance the efficacy of defect inspection models. Overall, The Defect Spectrum dataset demonstrates its potential in defect inspection research, offering a solid platform for testing and refining advanced models.

Color centers in diamond, among them the negatively-charged germanium vacancy (GeV^-), are promising candidates for many applications of quantum optics such as a quantum network. For efficient implementation, the optical transitions need to be coupled to a single optical mode. Here, we demonstrate the transfer of a nanodiamond containing a single ingrown GeV- center with excellent optical properties to an open Fabry-P\'erot microcavity by nanomanipulation utilizing an atomic force microscope. Coupling of the GeV- defect to the cavity mode is achieved, while the optical resonator maintains a high finesse of F = 7,700 and a 48-fold spectral density enhancement is observed. This article demonstrates the integration of a GeV- defect with a Fabry-P\'erot microcavity under ambient conditions with the potential to extend the experiments to cryogenic temperatures towards an efficient spin-photon platform.

Recent advances in synthetic methods enable designing subunits that self-assemble into structures with well-defined sizes and architectures, but yields are frequently suppressed by the formation of off-target metastable structures. Increasing the complexity (number of distinct inter-subunit interaction types) can inhibit off-target structures, but leads to slower kinetics and higher synthesis costs. Here, we use icosahedral shells formed of programmable triangular subunits as a model system, and identify design principles that produce the highest target yield at the lowest complexity. We use a symmetry-based construction to create a range of design complexities, starting from the maximal symmetry Caspar-Klug assembly up to the fully addressable, zero-symmetry assembly. Kinetic Monte Carlo simulations reveal that the most prominent defects leading to off-target assemblies are a class of disclinations. We derive symmetry-based rules for identifying the optimal (lowest-complexity, highest-symmetry) design that inhibits these disclinations, leading to robust, high-fidelity assembly of targets with arbitrarily large sizes. Optimal complexity varies non-monotonically with target size, with `magic' sizes appearing for high-symmetry designs in which symmetry axes do not intersect vertices of the triangular net. The optimal designs at magic sizes require 12 times fewer inequivalent interaction-types than the (minimal symmetry) fully addressable construction.

CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.

Quality control is of vital importance during electronics production. As the methods of producing electronic circuits improve, there is an increasing chance of solder defects during assembling the printed circuit board (PCB). Many technologies have been incorporated for inspecting failed soldering, such as X-ray imaging, optical imaging, and thermal imaging. With some advanced algorithms, the new technologies are expected to control the production quality based on the digital images. However, current algorithms sometimes are not accurate enough to meet the quality control. Specialists are needed to do a follow-up checking. For automated X-ray inspection, joint of interest on the X-ray image is located by region of interest (ROI) and inspected by some algorithms. Some incorrect ROIs deteriorate the inspection algorithm. The high dimension of X-ray images and the varying sizes of image dimensions also challenge the inspection algorithms. On the other hand, recent advances on deep learning shed light on image-based tasks and are competitive to human levels. In this paper, deep learning is incorporated in X-ray imaging based quality control during PCB quality inspection. Two artificial intelligence (AI) based models are proposed and compared for joint defect detection. The noised ROI problem and the varying sizes of imaging dimension problem are addressed. The efficacy of the proposed methods are verified through experimenting on a real-world 3D X-ray dataset. By incorporating the proposed methods, specialist inspection workload is largely saved.

The increasing use of two-dimensional (2D) materials in nanoelectronics demands robust metrology techniques for electrical characterization, especially for large-scale production. While atomic force microscopy (AFM) techniques like conductive AFM (C-AFM) offer high accuracy, they suffer from slow data acquisition speeds due to the raster scanning process. To address this, we introduce SparseC-AFM, a deep learning model that rapidly and accurately reconstructs conductivity maps of 2D materials like MoS_2 from sparse C-AFM scans. Our approach is robust across various scanning modes, substrates, and experimental conditions. We report a comparison between (a) classic flow implementation, where a high pixel density C-AFM image (e.g., 15 minutes to collect) is manually parsed to extract relevant material parameters, and (b) our SparseC-AFM method, which achieves the same operation using data that requires substantially less acquisition time (e.g., under 5 minutes). SparseC-AFM enables efficient extraction of critical material parameters in MoS_2, including film coverage, defect density, and identification of crystalline island boundaries, edges, and cracks. We achieve over 11x reduction in acquisition time compared to manual extraction from a full-resolution C-AFM image. Moreover, we demonstrate that our model-predicted samples exhibit remarkably similar electrical properties to full-resolution data gathered using classic-flow scanning. This work represents a significant step toward translating AI-assisted 2D material characterization from laboratory research to industrial fabrication. Code and model weights are available at github.com/UNITES-Lab/sparse-cafm.

Vacancies are prevalent and versatile in solid-state physics and materials science. The role of vacancies in strongly correlated materials, however, remains uncultivated until now. Here, we report the discovery of an unprecedented vacancy state forming an extended buckled-honeycomb-vacancy (BHV) ordering in Ir_{16}Sb_{18}. Superconductivity emerges by suppressing the BHV ordering through squeezing of extra Ir atoms into the vacancies or isovalent Rh substitution. The phase diagram on vacancy ordering reveals the superconductivity competes with the BHV ordering. Further theoretical calculations suggest that this ordering originates from a synergistic effect of the vacancy formation energy and Fermi surface nesting with a wave vector of (1/3, 1/3, 0). The buckled structure breaks the crystal inversion symmetry and can mostly suppress the density of states near the Fermi level. The peculiarities of BHV ordering highlight the importance of "correlated vacancies" and may serve as a paradigm for exploring other non-trivial excitations and quantum criticality.

We revisit the geometric theory of defects. In the differential-geometric models of defects that have been adopted since the 1950s, dislocations have been associated with torsion, disclinations with the full curvature, and point defects with the first kind trace of non-metricity. The mainstream formulation exhibits several conceptual and technical shortcomings, most notably a hierarchy inconsistency, the non-exictence of a genuine metric formulation, and the potential emergence of Ostrogradsky-type instabilities. These issues have motivated us to develop a new framework, namely a generalized teleparallel geometric theory of defects. In our model, dislocations are identified with the trace of torsion, disclinations with the second kind trace of the non-metricity, and point defects with the first kind trace of the non-metricity. In addition, we retain the scalar part torsion as a free parameter for describing some possible unknown degrees of freedom in the theory of defects. The proposed geometric theory of defects is free from all of the aforementioned drawbacks and is therefore worthy of further investigation. To ensure the coherence and completeness of the discussion, we begin our analysis with elastic deformations, then summarize the existing metric-affine geometric theory of defects, and finally proceed to our original contribution, namely the new theory introduced here. We formulate the entire theory in Eulerian coordinates. Naturally, all results can be reformulated in Lagrangian coordinates as well. All analyses and formulae are expressed in the language of exterior algebra and are carried out in coordinate-independent orthonormal frames.

Fault attacks are active, physical attacks that an adversary can leverage to alter the control-flow of embedded devices to gain access to sensitive information or bypass protection mechanisms. Due to the severity of these attacks, manufacturers deploy hardware-based fault defenses into security-critical systems, such as secure elements. The development of these countermeasures is a challenging task due to the complex interplay of circuit components and because contemporary design automation tools tend to optimize inserted structures away, thereby defeating their purpose. Hence, it is critical that such countermeasures are rigorously verified post-synthesis. As classical functional verification techniques fall short of assessing the effectiveness of countermeasures, developers have to resort to methods capable of injecting faults in a simulation testbench or into a physical chip. However, developing test sequences to inject faults in simulation is an error-prone task and performing fault attacks on a chip requires specialized equipment and is incredibly time-consuming. To that end, this paper introduces SYNFI, a formal pre-silicon fault verification framework that operates on synthesized netlists. SYNFI can be used to analyze the general effect of faults on the input-output relationship in a circuit and its fault countermeasures, and thus enables hardware designers to assess and verify the effectiveness of embedded countermeasures in a systematic and semi-automatic way. To demonstrate that SYNFI is capable of handling unmodified, industry-grade netlists synthesized with commercial and open tools, we analyze OpenTitan, the first open-source secure element. In our analysis, we identified critical security weaknesses in the unprotected AES block, developed targeted countermeasures, reassessed their security, and contributed these countermeasures back to the OpenTitan repository.

Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the framework of the first-principles Boltzmann transport equation. The methodology exploits a novel approach for estimating quadrupole tensors and including them in the electron-phonon interactions, and capitalises on a rigorous and efficient procedure for numerical convergence. The accuracy reached in this work allows to assess common approximations, including the role of exchange and correlation functionals, spin-orbit coupling, pseudopotentials, Wannier interpolation, Brillouin-zone sampling, dipole and quadrupole corrections, and the relaxation-time approximation. A detailed analysis is showcased on ten prototypical semiconductors, namely diamond, silicon, GaAs, 3C-SiC, AlP, GaP, c-BN, AlAs, AlSb, and SrO. By comparing this extensive dataset with available experimental data, we explore the intrinsic nature of phonon-limited carrier transport and magnetotransport phenomena in these compounds. We find that the most accurate calculations predict Hall mobilities up to a factor of two larger than experimental data; this could point to promising experimental improvements in the samples quality, or to the limitations of density-function theory in predicting the carrier effective masses and overscreening the electron-phonon matrix elements. By setting tight standards for reliability and reproducibility, the present work aims to facilitate validation and verification of data and software towards predictive calculations of transport phenomena in semiconductors.

Every generative model for crystalline materials harbors a critical structure size beyond which its outputs quietly become unreliable -- we call this the extrapolation frontier. Despite its direct consequences for nanomaterial design, this frontier has never been systematically measured. We introduce RADII, a radius-resolved benchmark of {sim}75,000 nanoparticle structures (55-11,298 atoms) that treats radius as a continuous scaling knob to trace generation quality from in-distribution to out-of-distribution regimes under leakage-free splits. RADII provides frontier-specific diagnostics: per-radius error profiles pinpoint each architecture's scaling ceiling, surface-interior decomposition tests whether failures originate at boundaries or in bulk, and cross-metric failure sequencing reveals which aspect of structural fidelity breaks first. Benchmarking five state-of-the-art architectures, we find that: (i) all models degrade by {sim}13% in global positional error beyond training radii, yet local bond fidelity diverges wildly across architectures -- from near-zero to over 2times collapse; (ii) no two architectures share the same failure sequence, revealing the frontier as a multi-dimensional surface shaped by model family; and (iii) well-behaved models obey a power-law scaling exponent αapprox 1/3 whose in-distribution fit accurately predicts out-of-distribution error, making their frontiers quantitatively forecastable. These findings establish output scale as a first-class evaluation axis for geometric generative models. The dataset and code are available at https://github.com/KurbanIntelligenceLab/RADII.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t_c. Here, we describe a method to extract the t_c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract {t}_{{c}}=5.5pm 1.8;{GHz} and {t}_{{c}}=2.2pm 1.3;{GHz} between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t_c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

3D anomaly detection (3D-AD) plays a critical role in industrial manufacturing, particularly in ensuring the reliability and safety of core equipment components. Although existing 3D datasets like Real3D-AD and MVTec 3D-AD offer broad application support, they fall short in capturing the complexities and subtle defects found in real industrial environments. This limitation hampers precise anomaly detection research, especially for industrial equipment components (IEC) such as bearings, rings, and bolts. To address this challenge, we have developed a point cloud anomaly detection dataset (IEC3D-AD) specific to real industrial scenarios. This dataset is directly collected from actual production lines, ensuring high fidelity and relevance. Compared to existing datasets, IEC3D-AD features significantly improved point cloud resolution and defect annotation granularity, facilitating more demanding anomaly detection tasks. Furthermore, inspired by generative 2D-AD methods, we introduce a novel 3D-AD paradigm (GMANet) on IEC3D-AD. This paradigm generates synthetic point cloud samples based on geometric morphological analysis, then reduces the margin and increases the overlap between normal and abnormal point-level features through spatial discrepancy optimization. Extensive experiments demonstrate the effectiveness of our method on both IEC3D-AD and other datasets.

Existing defect/anomaly generation methods often rely on few-shot learning, which overfits to specific defect categories due to the lack of large-scale paired defect editing data. This issue is aggravated by substantial variations in defect scale and morphology, resulting in limited generalization, degraded realism, and category consistency. We address these challenges by introducing UDG, a large-scale dataset of 300K normal-abnormal-mask-caption quadruplets spanning diverse domains, and by presenting UniDG, a universal defect generation foundation model that supports both reference-based defect generation and text instruction-based defect editing without per-category fine-tuning. UniDG performs Defect-Context Editing via adaptive defect cropping and structured diptych input format, and fuses reference and target conditions through MM-DiT multimodal attention. A two-stage training strategy, Diversity-SFT followed by Consistency-RFT, further improves diversity while enhancing realism and reference consistency. Extensive experiments on MVTec-AD and VisA show that UniDG outperforms prior few-shot anomaly generation and image insertion/editing baselines in synthesis quality and downstream single- and multi-class anomaly detection/localization. Code will be available at https://github.com/RetoFan233/UniDG.

Short-pulse, ultra high-intensity lasers have opened new regimes for studying fusion plasmas and creating novel ultra-short ion beams and neutron sources. Diagnosing the plasma in these experiments is important for optimizing the fusion yield but difficult due to the picosecond time scales, 10s of micron-cubed volumes and high densities. We propose to use the yields of photons and neutrons produced by parallel reactions involving the same reactants to diagnose the plasma conditions and predict the yields of specific reactions of interest. In this work, we focus on verifying the yield of the high-interest aneutronic proton-boron fusion reaction ^{11}{B}(p,2α){}^4{He}, which is difficult to measure directly due to the short stopping range of the produced αs in most materials. We identify promising photon-producing reactions for this purpose and compute the ratios of the photon yield to the α yield as a function of plasma parameters. In beam fusion experiments, the {}^{11}{C} yield is an easily-measurable observable to verify the α yield. In light of our results, improving and extending measurements of the cross sections for these parallel reactions are important steps to gaining greater control over these laser-driven fusion plasmas.

Lack of rigorous reproducibility and validation are major hurdles for scientific development across many fields. Materials science in particular encompasses a variety of experimental and theoretical approaches that require careful benchmarking. Leaderboard efforts have been developed previously to mitigate these issues. However, a comprehensive comparison and benchmarking on an integrated platform with multiple data modalities with both perfect and defect materials data is still lacking. This work introduces JARVIS-Leaderboard, an open-source and community-driven platform that facilitates benchmarking and enhances reproducibility. The platform allows users to set up benchmarks with custom tasks and enables contributions in the form of dataset, code, and meta-data submissions. We cover the following materials design categories: Artificial Intelligence (AI), Electronic Structure (ES), Force-fields (FF), Quantum Computation (QC) and Experiments (EXP). For AI, we cover several types of input data, including atomic structures, atomistic images, spectra, and text. For ES, we consider multiple ES approaches, software packages, pseudopotentials, materials, and properties, comparing results to experiment. For FF, we compare multiple approaches for material property predictions. For QC, we benchmark Hamiltonian simulations using various quantum algorithms and circuits. Finally, for experiments, we use the inter-laboratory approach to establish benchmarks. There are 1281 contributions to 274 benchmarks using 152 methods with more than 8 million data-points, and the leaderboard is continuously expanding. The JARVIS-Leaderboard is available at the website: https://pages.nist.gov/jarvis_leaderboard

Standing as one of the most significant barriers to reaching quantum advantage, state-preparation fidelities on noisy intermediate-scale quantum processors suffer from quantum-gate errors, which accumulate over time. A potential remedy is pulse-based state preparation. We numerically investigate the minimal evolution times (METs) attainable by optimizing (microwave and exchange) pulses on silicon hardware. We investigate two state preparation tasks. First, we consider the preparation of molecular ground states and find the METs for H_2, HeH^+, and LiH to be 2.4 ns, 4.4 ns, and 27.2 ns, respectively. Second, we consider transitions between arbitrary states and find the METs for transitions between arbitrary four-qubit states to be below 50 ns. For comparison, connecting arbitrary two-qubit states via one- and two-qubit gates on the same silicon processor requires approximately 200 ns. This comparison indicates that pulse-based state preparation is likely to utilize the coherence times of silicon hardware more efficiently than gate-based state preparation. Finally, we quantify the effect of silicon device parameters on the MET. We show that increasing the maximal exchange amplitude from 10 MHz to 1 GHz accelerates the METs, e.g., for H_2 from 84.3 ns to 2.4 ns. This demonstrates the importance of fast exchange. We also show that increasing the maximal amplitude of the microwave drive from 884 kHz to 56.6 MHz shortens state transitions, e.g., for two-qubit states from 1000 ns to 25 ns. Our results bound both the state-preparation times for general quantum algorithms and the execution times of variational quantum algorithms with silicon spin qubits.

Atomic layer deposition (ALD) is widely studied for numerous applications and is commercially employed in the semiconductor industry, where planar substrates are the norm. However, the inherent ALD feature of coating virtually any surface geometry with atomistic thickness control is equally attractive for coating particulate materials (supports). In this review, we provide a comprehensive overview of the developments in this decades-old field of ALD on particulate materials, drawing on a bottom-up and quantitative analysis of 799 articles from this field. The obtained dataset is the basis for abstractions regarding reactor types (specifically for particles), coating materials, reactants, supports and processing conditions. Furthermore, the dataset enables direct access to specific processing conditions (for a given material, surface functionality, application etc.) and increases accessibility of the respective literature. We also review fundamental concepts of ALD on particles, and discuss the most common applications, i.e., catalysis (thermo-, electro-, photo-), batteries, luminescent phosphors and healthcare. Finally, we identify historical trends, and provide an outlook on prospective developments.

The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation.

Automated detection of defects in Printed Circuit Board (PCB) manufacturing using Solder Paste Inspection (SPI) and Automated Optical Inspection (AOI) machines can help improve operational efficiency and significantly reduce the need for manual intervention. In this paper, using SPI-extracted features of 6 million pins, we demonstrate a data-centric approach to train Machine Learning (ML) models to detect PCB defects at three stages of PCB manufacturing. The 6 million PCB pins correspond to 2 million components that belong to 15,387 PCBs. Using a base extreme gradient boosting (XGBoost) ML model, we iterate on the data pre-processing step to improve detection performance. Combining pin-level SPI features using component and PCB IDs, we developed training instances also at the component and PCB level. This allows the ML model to capture any inter-pin, inter-component, or spatial effects that may not be apparent at the pin level. Models are trained at the pin, component, and PCB levels, and the detection results from the different models are combined to identify defective components.

3D anomaly detection plays a crucial role in monitoring parts for localized inherent defects in precision manufacturing. Embedding-based and reconstruction-based approaches are among the most popular and successful methods. However, there are two major challenges to the practical application of the current approaches: 1) the embedded models suffer the prohibitive computational and storage due to the memory bank structure; 2) the reconstructive models based on the MAE mechanism fail to detect anomalies in the unmasked regions. In this paper, we propose R3D-AD, reconstructing anomalous point clouds by diffusion model for precise 3D anomaly detection. Our approach capitalizes on the data distribution conversion of the diffusion process to entirely obscure the input's anomalous geometry. It step-wisely learns a strict point-level displacement behavior, which methodically corrects the aberrant points. To increase the generalization of the model, we further present a novel 3D anomaly simulation strategy named Patch-Gen to generate realistic and diverse defect shapes, which narrows the domain gap between training and testing. Our R3D-AD ensures a uniform spatial transformation, which allows straightforwardly generating anomaly results by distance comparison. Extensive experiments show that our R3D-AD outperforms previous state-of-the-art methods, achieving 73.4% Image-level AUROC on the Real3D-AD dataset and 74.9% Image-level AUROC on the Anomaly-ShapeNet dataset with an exceptional efficiency.

In industrial anomaly detection (IAD), accurately identifying defects amidst diverse anomalies and under varying imaging conditions remains a significant challenge. Traditional approaches often struggle with high false-positive rates, frequently misclassifying normal shadows and surface deformations as defects, an issue that becomes particularly pronounced in products with complex and intricate surface features. To address these challenges, we introduce PA-CLIP, a zero-shot anomaly detection method that reduces background noise and enhances defect detection through a pseudo-anomaly-based framework. The proposed method integrates a multiscale feature aggregation strategy for capturing detailed global and local information, two memory banks for distinguishing background information, including normal patterns and pseudo-anomalies, from true anomaly features, and a decision-making module designed to minimize false positives caused by environmental variations while maintaining high defect sensitivity. Demonstrated on the MVTec AD and VisA datasets, PA-CLIP outperforms existing zero-shot methods, providing a robust solution for industrial defect detection.

Perovskite solar cells (PSCs) have rapidly emerged as a leading contender in next-generation photovoltaic technologies, owing to their exceptional power conversion efficiencies and advantageous material properties. Despite these advances, challenges such as long-term stability, environmental sustainability, and scalable manufacturing continue to hinder their commercialization. Precursor additive engineering has shown promise in addressing these issues by enhancing both the performance and durability of PSCs. However, the explosive growth of scientific literature and the complex interplay of materials, processes, and device architectures make it increasingly difficult for researchers to efficiently access, organize, and utilize domain knowledge in this rapidly evolving field. To address this gap, we introduce Perovskite-R1, a specialized large language model (LLM) with advanced reasoning capabilities tailored for the discovery and design of PSC precursor additives. By systematically mining and curating 1,232 high-quality scientific publications and integrating a comprehensive library of 33,269 candidate materials, we constructed a domain-specific instruction-tuning dataset using automated question-answer generation and chain-of-thought reasoning. Fine-tuning the QwQ-32B model on this dataset resulted in Perovskite-R1, which can intelligently synthesize literature insights and generate innovative and practical solutions for defect passivation and the selection of precursor additives. Experimental validation of several model-proposed strategies confirms their effectiveness in improving material stability and performance. Our work demonstrates the potential of domain-adapted LLMs in accelerating materials discovery and provides a closed-loop framework for intelligent, data-driven advancements in perovskite photovoltaic research.

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometer-wide 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offer the promise of carrier confinement in a direct-gap material and charge separation needed to access the ultimate length scales necessary for future electronic applications.

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe_2, MoSe_2, CrI_3, 1T-TaS_2 and hexagonal BN. Our platform has been tested over a two-year period, during which more than 10^6 images of multiple different materials were acquired by over 30 individual researchers.

Point management is a critical component in optimizing 3D Gaussian Splatting (3DGS) models, as the point initiation (e.g., via structure from motion) is distributionally inappropriate. Typically, the Adaptive Density Control (ADC) algorithm is applied, leveraging view-averaged gradient magnitude thresholding for point densification, opacity thresholding for pruning, and regular all-points opacity reset. However, we reveal that this strategy is limited in tackling intricate/special image regions (e.g., transparent) as it is unable to identify all the 3D zones that require point densification, and lacking an appropriate mechanism to handle the ill-conditioned points with negative impacts (occlusion due to false high opacity). To address these limitations, we propose a Localized Point Management (LPM) strategy, capable of identifying those error-contributing zones in the highest demand for both point addition and geometry calibration. Zone identification is achieved by leveraging the underlying multiview geometry constraints, with the guidance of image rendering errors. We apply point densification in the identified zone, whilst resetting the opacity of those points residing in front of these regions so that a new opportunity is created to correct ill-conditioned points. Serving as a versatile plugin, LPM can be seamlessly integrated into existing 3D Gaussian Splatting models. Experimental evaluation across both static 3D and dynamic 4D scenes validate the efficacy of our LPM strategy in boosting a variety of existing 3DGS models both quantitatively and qualitatively. Notably, LPM improves both vanilla 3DGS and SpaceTimeGS to achieve state-of-the-art rendering quality while retaining real-time speeds, outperforming on challenging datasets such as Tanks & Temples and the Neural 3D Video Dataset.

It was previously believed that the Bloch electronic states of non-magnetic materials with inversion symmetry cannot have finite spin polarizations. However, since the seminal work by Zhang et al. [Nat. Phys. 10, 387-393 (2014)] on local spin polarizations of Bloch states in non-magnetic, centrosymmetric materials, the scope of spintronics has been significantly broadened. Here, we show, using a framework that is universally applicable independent of whether hidden spin polarizations are small (e.g., diamond, Si, Ge, and GaAs) or large (e.g., MoS2 and WSe2), that the corresponding quantity arising from orbital - instead of spin - degrees of freedom, the hidden orbital polarization, is (i) much more abundant in nature since it exists even without spin-orbit coupling and (ii) more fundamental since the interband matrix elements of the site-dependent orbital angular momentum operator determines the hidden spin polarization. We predict that the hidden spin polarization of transition metal dichalcogenides is reduced significantly upon compression. We suggest experimental signatures of hidden orbital polarization from photoemission spectroscopies and demonstrate that the current-induced hidden orbital polarization may play a far more important role than its spin counterpart in antiferromagnetic information technology by calculating the current-driven antiferromagnetism in compressed silicon.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

We introduce a Three-Dimensional Convolutional Variational Autoencoder (3D-CVAE) for automated anomaly detection in Electron Energy Loss Spectroscopy Spectrum Imaging (EELS-SI) data. Our approach leverages the full three-dimensional structure of EELS-SI data to detect subtle spectral anomalies while preserving both spatial and spectral correlations across the datacube. By employing negative log-likelihood loss and training on bulk spectra, the model learns to reconstruct bulk features characteristic of the defect-free material. In exploring methods for anomaly detection, we evaluated both our 3D-CVAE approach and Principal Component Analysis (PCA), testing their performance using Fe L-edge peak shifts designed to simulate material defects. Our results show that 3D-CVAE achieves superior anomaly detection and maintains consistent performance across various shift magnitudes. The method demonstrates clear bimodal separation between normal and anomalous spectra, enabling reliable classification. Further analysis verifies that lower dimensional representations are robust to anomalies in the data. While performance advantages over PCA diminish with decreasing anomaly concentration, our method maintains high reconstruction quality even in challenging, noise-dominated spectral regions. This approach provides a robust framework for unsupervised automated detection of spectral anomalies in EELS-SI data, particularly valuable for analyzing complex material systems.

The demand for safe, high-energy-density batteries has spotlighted halide solid-state electrolytes, which offer the potential for enhanced ionic mobility, electrochemical stability, and interfacial deformability. Accelerating their discovery requires extensive molecular dynamics, which has been increasingly enabled by universal machine learning interatomic potentials trained on foundational datasets. However, the dynamic softness of halides poses a stringent test of whether general-purpose models can reliably replace first-principles calculations under the highly distorted, elevated-temperature regimes necessary to probe ion transport. Here, we present AQVolt26, a dataset of 322,656 r^2SCAN single-point calculations for lithium halides, generated via high-temperature configurational sampling across sim5K structures. We demonstrate that foundational datasets provide a strong baseline for stable halide chemistries and transfer local forces well, however absolute energy predictions degrade in distorted higher-temperature regimes. Co-training with AQVolt26 resolves this blind spot. Furthermore, incorporating Materials Project relaxation data improves near-equilibrium performance but degrades extreme-strain robustness without enhancing high-temperature force accuracy. These results demonstrate that domain-specific configurational sampling is essential for the reliable dynamic screening of halide electrolytes. Furthermore, our findings suggest that while foundational models provide a robust base, they are most effective for dynamically soft solid-state chemistries when augmented with targeted, high-temperature data. Finally, we show that near-equilibrium relaxation data serves as a task-specific complement rather than a universally beneficial addition.

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

Detecting surface anomalies of industrial materials poses a significant challenge within a myriad of industrial manufacturing processes. In recent times, various methodologies have emerged, capitalizing on the advantages of employing a network pre-trained on natural images for the extraction of representative features. Subsequently, these features are subjected to processing through a diverse range of techniques including memory banks, normalizing flow, and knowledge distillation, which have exhibited exceptional accuracy. This paper revisits approaches based on pre-trained features by introducing a novel method centered on target-specific embedding. To capture the most representative features of the texture under consideration, we employ a variant of a contrastive training procedure that incorporates both artificially generated defective samples and anomaly-free samples during training. Exploiting the intrinsic properties of surfaces, we derived a meaningful representation from the defect-free samples during training, facilitating a straightforward yet effective calculation of anomaly scores. The experiments conducted on the MVTEC AD and TILDA datasets demonstrate the competitiveness of our approach compared to state-of-the-art methods.

High-performance DUV spectroscopy drives advancements in biomedical research, clinical diagnosis, and material science. Existing DUV resonant nanostructures face instability and photoluminescent noise challenges. We propose robust Si metasurfaces leveraging polaritonic resonances, a unique property driven by interband transitions, for enhanced nanophotonic sensing. Our polaritonic Kerker-type void metasurface enables double-resonance Raman scattering to analyze 2D semiconductors, improves biomolecule autofluorescence, and offers superior stability. This scalable platform unlocks versatile applications in interdisciplinary DUV spectroscopy and emerging nanomaterials research.

Accurate defect segmentation is critical for industrial inspection, yet dense pixel-level annotations are rarely available. A common workaround is to convert inexpensive bounding boxes into pseudo-masks using foundation segmentation models such as the Segment Anything Model (SAM). However, these pseudo-labels are systematically noisy on industrial surfaces, often hallucinating background structure while missing sparse defects. To address this limitation, a noise-robust box-to-pixel distillation framework, Boxes2Pixels, is proposed that treats SAM as a noisy teacher rather than a source of ground-truth supervision. Bounding boxes are converted into pseudo-masks offline by SAM, and a compact student is trained with (i) a hierarchical decoder over frozen DINOv2 features for semantic stability, (ii) an auxiliary binary localization head to decouple sparse foreground discovery from class prediction, and (iii) a one-sided online self-correction mechanism that relaxes background supervision when the student is confident, targeting teacher false negatives. On a manually annotated wind turbine inspection benchmark, the proposed Boxes2Pixels improves anomaly mIoU by +6.97 and binary IoU by +9.71 over the strongest baseline trained under identical weak supervision. Moreover, online self-correction increases the binary recall by +18.56, while the model employs 80\% fewer trainable parameters. Code is available at https://github.com/CLendering/Boxes2Pixels.

In 2021 Nature Physics published a paper by Vaitiekenas, Liu, Krogstrup and Marcus titled "Zero-bias peaks at zero magnetic field in ferromagnetic hybrid nanowires". The paper reports low temperature transport measurements on semiconductor InAs nanowires with two partly overlapping shells -- a shell of EuS, a magnetic insulator, and a shell of Al, a metal that becomes superconducting at temperatures below 1.2K. The paper claims that (1) the data are consistent with induced topological superconductivity and Majorana zero modes (MZMs), and (2) that this is facilitated by the breaking of the time reversal symmetry through a direct magnetic interaction with the EuS shell. In this Matters Arising, we present an alternative explanation which is based on trivial effects that are likely to appear in the reported geometry. Specifically, first, we find that data the authors present in support of the topological superconductivity claim can originate from unintended quantum dots in their devices, a widely known likely explanation that is not being discussed in the paper. Second, our analysis of the setup, supported by our numerical micromagnetic simulations, shows similar effects could be obtained due to stray magnetic fields from the region of the EuS shell damaged during Al etching. This basic picture should come before the exotic interpretation in terms of magnetic exchange interaction with a ferromagnetic insulator.

Semiconductor lasers have been rapidly evolving to meet the demands of next-generation optical networks. This imposes much more stringent requirements on the laser reliability, which are dominated by degradation mechanisms (e.g., sudden degradation) limiting the semiconductor laser lifetime. Physics-based approaches are often used to characterize the degradation behavior analytically, yet explicit domain knowledge and accurate mathematical models are required. Building such models can be very challenging due to a lack of a full understanding of the complex physical processes inducing the degradation under various operating conditions. To overcome the aforementioned limitations, we propose a new data-driven approach, extracting useful insights from the operational monitored data to predict the degradation trend without requiring any specific knowledge or using any physical model. The proposed approach is based on an unsupervised technique, a conditional variational autoencoder, and validated using vertical-cavity surface-emitting laser (VCSEL) and tunable edge emitting laser reliability data. The experimental results confirm that our model (i) achieves a good degradation prediction and generalization performance by yielding an F1 score of 95.3%, (ii) outperforms several baseline ML based anomaly detection techniques, and (iii) helps to shorten the aging tests by early predicting the failed devices before the end of the test and thereby saving costs

We describe the first-principles design and subsequent synthesis of a new material with the specific functionalities required for a solid-state-based search for the permanent electric dipole moment of the electron. We show computationally that perovskite-structure europium barium titanate should exhibit the required large and pressure-dependent ferroelectric polarization, local magnetic moments, and absence of magnetic ordering even at liquid helium temperature. Subsequent synthesis and characterization of Eu_{0.5}Ba_{0.5}TiO_3 ceramics confirm the predicted desirable properties.

Anomaly detection is a crucial process in industrial manufacturing and has made significant advancements recently. However, there is a large variance between the data used in the development and the data collected by the production environment. Therefore, we present the Texture-AD benchmark based on representative texture-based anomaly detection to evaluate the effectiveness of unsupervised anomaly detection algorithms in real-world applications. This dataset includes images of 15 different cloth, 14 semiconductor wafers and 10 metal plates acquired under different optical schemes. In addition, it includes more than 10 different types of defects produced during real manufacturing processes, such as scratches, wrinkles, color variations and point defects, which are often more difficult to detect than existing datasets. All anomalous areas are provided with pixel-level annotations to facilitate comprehensive evaluation using anomaly detection models. Specifically, to adapt to diverse products in automated pipelines, we present a new evaluation method and results of baseline algorithms. The experimental results show that Texture-AD is a difficult challenge for state-of-the-art algorithms. To our knowledge, Texture-AD is the first dataset to be devoted to evaluating industrial defect detection algorithms in the real world. The dataset is available at https://XXX.

Freestanding thin films, a class of low-dimensional materials capable of maintaining structural integrity without substrates, have emerged as a forefront research focus. Their unique advantages-circumventing substrate clamping, liberating intrinsic material properties, and enabling cross-platform heterogeneous integration-underpin this prominence. This review systematically summarizes core fabrication techniques, including physical delamination (e.g., laser lift-off, mechanical exfoliation) and chemical etching, alongside associated transfer strategies. It further explores the induced strain modulation mechanisms, extreme mechanical properties and interface decoupling effects enabled by these films. Representative case studies demonstrate breakthrough applications in flexible/ultrathin electronics, ultrahigh-sensitivity sensors and the exploration of novel quantum states. Critical challenges regarding scalable fabrication, precise interface control, and long-term stability are analyzed, concluding with prospects for emerging applications in bio-inspired intelligent devices, quantum precision sensing, and brain-inspired neural networks.

Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive index appearing in small gap materials and vice-versa. Here, we conduct a first-principles high-throughput study on more than 4000 semiconductors (with a special focus on oxides). Our data confirm the general inverse trend between refractive index and band gap but interesting outliers are also identified. The data are then analyzed through a simple model involving two main descriptors: the average optical gap and the effective frequency. The former can be determined directly from the electronic structure of the compounds, but the latter cannot. This calls for further analysis in order to obtain a predictive model. Nonetheless, it turns out that the negative effect of a large band gap on the refractive index can counterbalanced in two ways: (i) by limiting the difference between the direct band gap and the average optical gap which can be realized by a narrow distribution in energy of the optical transitions and (ii) by increasing the effective frequency which can be achieved through either a high number of transitions from the top of the valence band to the bottom of the conduction or a high average probability for these transitions. Focusing on oxides, we use our data to investigate how the chemistry influences this inverse relationship and rationalize why certain classes of materials would perform better. Our findings can be used to search for new compounds in many optical applications both in the linear and non-linear regime (waveguides, optical modulators, laser, frequency converter, etc.).

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6°. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5°, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors.

We conducted a high-throughput search for topological magnetic materials on 522 new, experimentally reported commensurate magnetic structures from MAGNDATA, doubling the number of available materials on the Topological Magnetic Materials database. This brings up to date the previous studies which had become incomplete due to the discovery of new materials. For each material, we performed first-principle electronic calculations and diagnosed the topology as a function of the Hubbard U parameter. Our high-throughput calculation led us to the prediction of 250 experimentally relevant topologically non-trivial materials, which represent 47.89% of the newly analyzed materials. We present five remarkable examples of these materials, each showcasing a different topological phase: Mn{}_2AlB{}_2 (BCSID 1.508), which exhibits a nodal line semimetal to topological insulator transition as a function of SOC, CaMnSi (BCSID 0.599), a narrow gap axion insulator, UAsS (BCSID 0.594) a 5f-orbital Weyl semimetal, CsMnF{}_4 (BCSID 0.327), a material presenting a new type of quasi-symmetry protected closed nodal surface and FeCr{}_2S{}_4 (BCSID 0.613), a symmetry-enforced semimetal with double Weyls and spin-polarised surface states.

Although recent methods have tried to introduce large multimodal models (LMMs) into industrial anomaly detection (IAD), their generalization in the IAD field is far inferior to that for general purposes. We summarize the main reasons for this gap into two aspects. On one hand, general-purpose LMMs lack cognition of defects in the visual modality, thereby failing to sufficiently focus on defect areas. Therefore, we propose to modify the AnyRes structure of the LLaVA model, providing the potential anomalous areas identified by existing IAD models to the LMMs. On the other hand, existing methods mainly focus on identifying defects by learning defect patterns or comparing with normal samples, yet they fall short of understanding the causes of these defects. Considering that the generation of defects is closely related to the manufacturing process, we propose a manufacturing-driven IAD paradigm. An instruction-tuning dataset for IAD (InstructIAD) and a data organization approach for Chain-of-Thought with manufacturing (CoT-M) are designed to leverage the manufacturing process for IAD. Based on the above two modifications, we present Triad, a novel LMM-based method incorporating an expert-guided region-of-interest tokenizer and manufacturing process for industrial anomaly detection. Extensive experiments show that our Triad not only demonstrates competitive performance against current LMMs but also achieves further improved accuracy when equipped with manufacturing processes. Source code, training data, and pre-trained models will be publicly available at https://github.com/tzjtatata/Triad.

We introduce fusion-based quantum computing (FBQC) - a model of universal quantum computation in which entangling measurements, called fusions, are performed on the qubits of small constant-sized entangled resource states. We introduce a stabilizer formalism for analyzing fault tolerance and computation in these schemes. This framework naturally captures the error structure that arises in certain physical systems for quantum computing, such as photonics. FBQC can offer significant architectural simplifications, enabling hardware made up of many identical modules, requiring an extremely low depth of operations on each physical qubit and reducing classical processing requirements. We present two pedagogical examples of fault-tolerant schemes constructed in this framework and numerically evaluate their threshold under a hardware agnostic fusion error model including both erasure and Pauli error. We also study an error model of linear optical quantum computing with probabilistic fusion and photon loss. In FBQC the non-determinism of fusion is directly dealt with by the quantum error correction protocol, along with other errors. We find that tailoring the fault-tolerance framework to the physical system allows the scheme to have a higher threshold than schemes reported in literature. We present a ballistic scheme which can tolerate a 10.4% probability of suffering photon loss in each fusion.

Matbench Discovery simulates the deployment of machine learning (ML) energy models in a high-throughput search for stable inorganic crystals. We address the disconnect between (i) thermodynamic stability and formation energy and (ii) in-domain vs out-of-distribution performance. Alongside this paper, we publish a Python package to aid with future model submissions and a growing online leaderboard with further insights into trade-offs between various performance metrics. To answer the question which ML methodology performs best at materials discovery, our initial release explores a variety of models including random forests, graph neural networks (GNN), one-shot predictors, iterative Bayesian optimizers and universal interatomic potentials (UIP). Ranked best-to-worst by their test set F1 score on thermodynamic stability prediction, we find CHGNet > M3GNet > MACE > ALIGNN > MEGNet > CGCNN > CGCNN+P > Wrenformer > BOWSR > Voronoi tessellation fingerprints with random forest. The top 3 models are UIPs, the winning methodology for ML-guided materials discovery, achieving F1 scores of ~0.6 for crystal stability classification and discovery acceleration factors (DAF) of up to 5x on the first 10k most stable predictions compared to dummy selection from our test set. We also highlight a sharp disconnect between commonly used global regression metrics and more task-relevant classification metrics. Accurate regressors are susceptible to unexpectedly high false-positive rates if those accurate predictions lie close to the decision boundary at 0 eV/atom above the convex hull where most materials are. Our results highlight the need to focus on classification metrics that actually correlate with improved stability hit rate.

We present a method to convert certain single photon sources into devices capable of emitting large strings of photonic cluster state in a controlled and pulsed "on demand" manner. Such sources would greatly reduce the resources required to achieve linear optical quantum computation. Standard spin errors, such as dephasing, are shown to affect only 1 or 2 of the emitted photons at a time. This allows for the use of standard fault tolerance techniques, and shows that the photonic machine gun can be fired for arbitrarily long times. Using realistic parameters for current quantum dot sources, we conclude high entangled-photon emission rates are achievable, with Pauli-error rates per photon of less than 0.2%. For quantum dot sources the method has the added advantage of alleviating the problematic issues of obtaining identical photons from independent, non-identical quantum dots, and of exciton dephasing.

Industry 4.0 has revolutionized manufacturing by driving digitalization and shifting the paradigm toward additive manufacturing (AM). Fused Deposition Modeling (FDM), a key AM technology, enables the creation of highly customized, cost-effective products with minimal material waste through layer-by-layer extrusion, posing a significant challenge to traditional subtractive methods. However, the susceptibility of material extrusion techniques to errors often requires expert intervention to detect and mitigate defects that can severely compromise product quality. While automated error detection and machine learning models exist, their generalizability across diverse 3D printer setups, firmware, and sensors is limited, and deep learning methods require extensive labeled datasets, hindering scalability and adaptability. To address these challenges, we present a process monitoring and control framework that leverages pre-trained Large Language Models (LLMs) alongside 3D printers to detect and address printing defects. The LLM evaluates print quality by analyzing images captured after each layer or print segment, identifying failure modes and querying the printer for relevant parameters. It then generates and executes a corrective action plan. We validated the effectiveness of the proposed framework in identifying defects by comparing it against a control group of engineers with diverse AM expertise. Our evaluation demonstrated that LLM-based agents not only accurately identify common 3D printing errors, such as inconsistent extrusion, stringing, warping, and layer adhesion, but also effectively determine the parameters causing these failures and autonomously correct them without any need for human intervention.

We present the Open Stamped Parts Dataset (OSPD), featuring synthetic and real images of stamped metal sheets for auto manufacturing. The real part images, captured from 7 cameras, consist of 7,980 unlabeled images and 1,680 labeled images. In addition, we have compiled a defect dataset by overlaying synthetically generated masks on 10\% of the holes. The synthetic dataset replicates the real manufacturing environment in terms of lighting and part placement relative to the cameras. The synthetic data includes 7,980 training images, 1,680 validation images and 1,680 test images, each with bounding box and segmentation mask annotations around all holes. 10\% of the holes in the synthetic data mimic defects generated in the real image dataset. We trained a hole-detection model on the synthetic-OSPD, achieving a modified recall score of 67.2\% and a precision of 94.4\% . We anticipate researchers in auto manufacturing use OSPD to advance the state of the art in defect detection of stamped holes in the metal-sheet stamping process. The dataset is available for download at: https://tinyurl.com/hm6xatd7.

Surface defect detection is a critical task across numerous industries, aimed at efficiently identifying and localising imperfections or irregularities on manufactured components. While numerous methods have been proposed, many fail to meet industrial demands for high performance, efficiency, and adaptability. Existing approaches are often constrained to specific supervision scenarios and struggle to adapt to the diverse data annotations encountered in real-world manufacturing processes, such as unsupervised, weakly supervised, mixed supervision, and fully supervised settings. To address these challenges, we propose SuperSimpleNet, a highly efficient and adaptable discriminative model built on the foundation of SimpleNet. SuperSimpleNet incorporates a novel synthetic anomaly generation process, an enhanced classification head, and an improved learning procedure, enabling efficient training in all four supervision scenarios, making it the first model capable of fully leveraging all available data annotations. SuperSimpleNet sets a new standard for performance across all scenarios, as demonstrated by its results on four challenging benchmark datasets. Beyond accuracy, it is very fast, achieving an inference time below 10 ms. With its ability to unify diverse supervision paradigms while maintaining outstanding speed and reliability, SuperSimpleNet represents a promising step forward in addressing real-world manufacturing challenges and bridging the gap between academic research and industrial applications. Code: https://github.com/blaz-r/SuperSimpleNet

The aim of surface defect detection is to identify and localise abnormal regions on the surfaces of captured objects, a task that's increasingly demanded across various industries. Current approaches frequently fail to fulfil the extensive demands of these industries, which encompass high performance, consistency, and fast operation, along with the capacity to leverage the entirety of the available training data. Addressing these gaps, we introduce SuperSimpleNet, an innovative discriminative model that evolved from SimpleNet. This advanced model significantly enhances its predecessor's training consistency, inference time, as well as detection performance. SuperSimpleNet operates in an unsupervised manner using only normal training images but also benefits from labelled abnormal training images when they are available. SuperSimpleNet achieves state-of-the-art results in both the supervised and the unsupervised settings, as demonstrated by experiments across four challenging benchmark datasets. Code: https://github.com/blaz-r/SuperSimpleNet .

Despite generating increasingly photorealistic images, text-to-image (T2I) models still exhibit localized, subtle, and structurally complex failures. Diagnosing these failures requires instance-level feedback that answers where a defect occurs, what type it is, why it is defective, and its importance to overall image quality. While recent dense-feedback methods move beyond scalar supervision, their heatmap-centric representations still formulate diagnosis as pixel-field regression, making it difficult to localize variable-cardinality defects and bind semantic reasons to individual failures. To address this representation bottleneck, we propose Structured Defect Grounding (SDG), which casts T2I diagnosis as structured set prediction by modeling each defect as a (location, type, reason, importance) tuple. To make this formulation trainable and measurable, we introduce SDG-30K, a 30K-image dataset with box-grounded annotations across four modern T2I generators, together with a dedicated evaluation protocol, SDG-Eval. Building on this structured representation, we further present a diagnosis-to-alignment framework in which a Vision-Language Model (VLM) serves as the SDG detector, and BoxFlow-GRPO converts predicted defect sets into box-derived, importance-weighted spatial rewards for diffusion model alignment. Extensive experiments show that our SDG detector outperforms leading proprietary VLMs on structured defect grounding, while SDG-guided rewards consistently improve T2I alignment and support localized image refinement. These results establish SDG as a unified, instance-level interface for diagnosing, evaluating, and enhancing modern generative models.

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.